Metal-insulator transition in Si:X „X5P,B...: Anomalous response to a magnetic field
نویسندگان
چکیده
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single universal curve: s(n ,H)/s(n ,0)5G@HDn# with a magnetic-field crossover exponent d'2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, Dnc}H , is a common feature of uncompensated doped semiconductors. @S0163-1829~98!07036-2#
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The metal-insulator transition in Si:X: Anomalous response to a magnetic field
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve: σ(n,H)/σ(n, 0) = G[H−δ∆n] with δ ≈ 2. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompe...
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